View SPM6M080-010D10_3116833.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 1 spm6m080-010d three-phase mosfet bridge, with gate driver and optical isolation description: a 100 volt, 80 amp, three phase mosfet bridge electrical characteristics per mosfet device (tj=25 0 c unless otherwise specified) p p a a r r a a m m e e t t e e r r s s y y m m b b o o l l m m i i n n t t y y p p m m a a x x u u n n i i t t mosfet specifications drain-to-source breakdown voltage i d = 500 a, v gs = 0v bv dss 100 - - v continuous drain current t c = 25 o c t c = 90 o c i d - - 80 70 a pulsed drain current, pulse width limited to 1 msec i dm - - 200 a zero gate voltage drain current v ds = 100 v, v gs =0v t i =25 o c v ds = 80 v, v gs =0v t i =125 o c i css - - 1 3 ma ma static drain-to-source on resistance, t j = 25 o c t j = 150 o c i d = 60a, v gs = 15v, r dson - 0.009 0.018 0.012 - maximum thermal resistance r jc - - 0.65 o c/w maximum operating junction temperature t jmax -40 - 150 o c maximum storage junction temperature t jmax -55 - 150 o c
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 2 spm6m080-010d product parameters - (t c =25 o c unless otherwise noted) over-temperature shutdown over-temperature shutdown tsd 100 105 110 o c over-temperature output tso 10 10mv/ o c over-temperature shutdown hysteresis 20 o c diodes characteristics continuous source current, t c = 90 o c i s - - 70 a diode forward voltage, i s = 60a, t j = 25 o c v sd - 1.15 v diode reverse recovery time (i s =50a, v dd =50v , di/dt=100 a/ s) t rr - 70 - nsec gate driver supply voltage vcc 14 15 18 v supply input current at vcc, pin 19, without pwm switching , with 10khz pwm at two inputs 35 50 ma input on current hin, lin 2 5.0 ma opto-isolator logic high input threshold i th - 1.6 - ma input reverse breakdown voltage bv in 5.0 - - v input forward voltage @ i in = 5ma v f - 1.5 1.7 v
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 3 spm6m080-010d under voltage lockout vccuv 9.0 10.0 11.5 v itrip reference voltage (1) itrip-ref 1.57 1.63 1.68 v input-to-output turn on delay output turn on rise time input-to-output turn off delay output turn off fall time @ vcc=50v, id=50a, t c = 25 t ond t r t offd t f - - - - 700 50 750 60 - - - - nsec dead time requirement, for shoot through prevention 600 750 nsec opto-isolator input-to-output isol ation voltage, momentary - - 2500 - v opto-isolator operating input common mode voltage 1000 v opto-isolator operating input common mode transient immunity, with iin > 5ma 10 kv/usec pin-to-case isolation voltage, dc voltage - 1500 - v dc bus current sensor shunt resistor value - - 5 - mohm current amplifier gain, referenced to signal gnd 0.049 v/a current amplifier dc offset (zero dc bus current) 0.010 0.030 v current amplifier response time 3 usec (1) itrip current limit is internally set to 35a peak. the set point can be lowered by connecting a resistor between itrip-ref and gnd. the set point can be increased by connecting a resist or between itrip-ref and +5v ref. the off time duration is about 70 usec.
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 4 spm6m080-010d
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 5 spm6m080-010d figure 2 - package drawing top & side views (all dimensions are in inches, tolerance is +/- 0.010?)
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 6 spm6m080-010d figure 3 - package pin locations (all dimensions are in inches; toleran ce is +/- 0.005? unless otherwise specified)
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 7 spm6m080-010d pin out pin # name description 1 hina isolated drive input for high-side mosfet of phase a 2 hina-rtn return for input at 1 3 nc not connected 4 lina isolated drive input for low-side mosfet of phase a 5 lina-rtn return for input at 4 6 nc not connected 7 hinb isolated drive input for high-side mosfet of phase b 8 hinb-rtn return for input at 7 9 nc not connected 10 linb isolated drive input for low-side mosfet of phase b 11 linb-rtn return for input at 10 12 hinc isolated drive input for high-side mosfet of phase c 13 hinc-rtn return for input at 12 14 linc isolated drive input for low-side mosfet of phase c 15 linc-rtn return for input at 14 16 nc not connected 17 nc not connected 18 nc not connected 19 vcc +15v input biasing supply connection for the controller. under-voltage lockout keeps all outputs off for vcc below 10.5v. vcc pin should be connected to an isolated 15v power supply. vcc recommended limits are 14v to 16v , and shall not exceed 18v. the return of vcc is pin 20. recommended power supply capability is about 70ma. 20 +15v rtn (3) signal ground for all signals at pins 19 through 27. this ground is internally connected to the +vdc rtn through 1.7 ohms. it is preferred not to have external connection between signal gnd and +vdc rtn.
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 8 spm6m080-010d pin # name description 21 sd (3) it is an active low, dual function input/output pin. it is internally pulled high to +5v by 2.74k . as a low input it shuts down all mosfets regardless of the hin and lin signals. sd is internally activated by t he over-temperature shutdown, over- current limit, and desaturation protection desaturation shutdown is a latching feature. over-temperature shutdown, and over-current limit are not latching features. sd can be used to shutdown all mosfets by an external command. an open collector switch shall be used to pull down sd externally. sd can be used as a fault condition output. low output at sd indicates a latching fault situation. 22 flt (3) it is a dual function i nput/output pin. it is an active low input, internally pulled high to +5v by 2.74k . if pulled down, it will freeze the status of all the six mosfets regardless of the hin and lin signals. as an output, pin 13, reports desaturation protection activation. when desaturation protection is activated a low output for about 9 sec is reported. if any other protection feature is activated, it will not be reported by pin 22. 23 flt-clr (3) is a fault clear input. it can be used to reset a latching fault condition, due to desaturation protection. pin 23 an active high input. it is internally pulled down by 2.0k . a latching fault due to desaturation can be cleared by pulling this input high to +5v by 200-500 , or to +15v by 3-5k , as shown in fig. 6. it is recommended to activate fault clear input for about 300 sec at startup.
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 9 spm6m080-010d pin # name description 24 +5v output +5v output. maximum output current is 30ma 25 itrip-ref (3) adjustable voltage divider reference for over-current shutdown. internal pull-up to +5v 31.6k , pull down to ground is 10k , and hysteresis resistance of 50 k . the internal set point is 1.64v, corresponding to over-current shutdown of 34a. the re-start delay time is about 70 usec. 26 idco dc bus current sense amplifier output. the sensor gain is 0.049v/a. the internal impedance of this output is 1k , and internal filter capacitance is 1nf. 27 tco analog output of case temperature sensor. the sensor output gain is 0.010 v/ o c, with zero dc offset. this sensor can measure both positive and negative o c. the internal impedance of this output is 8.87k . the internal block diagram of the temperature sensor is shown in fig. 5. 28 &29 pha phase a output 30 & 31 phb phase b output 32 & 33 phc phase c output 34 & 35 +vdc rtn dc bus return 36 & 37 +vdc dc bus input case case isolated from all terminals
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 10 spm6m080-010d application notes a- input interface: recommended input turn-on current for all six drive signals is 5-8ma. for higher noise immunity the tri-state diffe rential buffer, ds34c87, is recommended as shown in fig. 4. note : connect lina to non-inverting out put for a non-inverting input logic. connect lina to inve rting output for an inverting input logic. b-temperature sensor output: for both negative and positive temperature meas urement capability, contact the factory. fig. 4. input signal buffer opto- coupler input lin a lina-r 300-400 fig. 5 temperature sensor internal block diagram 0.1uf pin 27 8.87k
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 11 spm6m080-010d c- system start up sequence: activate fault clear input for about 300 sec at startup. the micro-cont roller enable output is inverted and fed to the second ds34c87 contro l input. when the controller is in disable mode, the flt-clr is enabled and phase c low-side mosfet is turned on. th is allows for the bootstrap circuit of the high-side mosfet of phase c to be charged. at t he same time, the high-side bootstrap circuits of phases a and b will charge through the motor winding. once the controller is enabled, pwm signals of all channels should start. fig. 6 shows a recommended startup circuit. notes: 1- gnd1 and gnd2 are isolat ed grounds from each other. 2- the +5v power supply used for ds34c87 is an isolated power supply. 3- the +15v power supply used for spm6m080-010d is an isolated power supply. spm6g080-010d outa-p outa-n outb-n outb-p outd-p outd-n outc-n outc-p gnd +5v a /b cont c/d cont inc ind inb ina ds34c87 350 linc linc-r linb linb-r hinb-r hinb hina hina-r lina-r lina 350 350 350 350 350 350 350 ds34c87 ina inb ind inc c/d cont a /b cont +5v gnd outc-p outc-n outd-n outd-p outb-p outb-n outa-n outa-p hinc hinc-r micro controller enable hina lina hinb linb hinc linc flt-cl r 2.74k sfh6186-4 fig. 6 input interface and startup circuit gnd2 +5v-in gnd1 2.74k 2.74k 2.74k 2.74k 2.74k 15v 2.74k
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 12 spm6m080-010d truth table for ds34c87 input control input non-invert ing output inverting output h h h l l h l h x l z z d- dc bus charging from 15v ? each mosfet is protected against desaturation. ? d2 is the desaturation sens e diode for the high-side mosfet ? d3 is the desaturation sens e diode for the low-side mosfet ? when the dc bus voltage is not applied or bel ow 15v, there is a ch arging path from the 15v supply to the dc bus through d2 and d3 and the corresponding pull up 100k ohm resistor. the charging current is 0.15ma per mosfet. total charging current is about 1.5ma. ? do not apply pwm signal if the dc bus voltage is below 20v. dsh dsl d1 ? gate driver +15v rtn sgnl gnd1 +vdc pha vcc +15v q1h q1l d2 d3 r1 100k 700 k r2 100k 700 k +vdc rtn figure 7. charging path from 15v supply to dc bus when dc bus is off vbs
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 13 spm6m080-010d e- active bias for desaturation detection circuit: the desaturation detection is done by diode d2 for the high side mosfet q1h, and by diode d3 for the low side mosfet q1l. the internal detection circuit, input dsh for the high-side and input dsl for the low-side, is bi ased by the local supply voltage vcc for the low side and vbs for the high si de. when the mosfet is on the corresponding detection diode is on. the current flowing through t he diode is determined by the internal pull resistor, r1 for the high side and r2 for the low side. to minimize the current drain from vcc and vbs, r1 and r2 are set to be 100k . lower value of r1 will overload the bootstrap circuit and reduce the boot strap capacitor holding time. to increase the circuit noise immunity, an active bias circuit is used to lower r1 and r2 when the corresponding mosfet is off by moni toring the input voltage at both dsh, dsl inputs. if the inputs at dsh drops below 7v the active bias is disabled. the active bias circuits result in reduc ing r1 or r2 to about 110 when the corresponding input is above 8v, as shown in fig. 8. this active circuit results in higher noise immunity. figure 8. active bias for dsh and dsl internal inputs r1 100k r1 110 7v 8v vdsh r1
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 14 spm6m080-010d f- limitation with trapezoidal motor drive in trapezoidal motor drives, two phases are c onducting while the third phase is off at any time. in fig. 9 shows the voltage waveform across one phase, during intervals t1 and t2, the mosfet is off while the active bias circ uit is above 8v, and below 15v. this results in activating the active pull up circuit and reduc ing the corresponding r1 or r2 down to about 110 . a high current will flow from vcc or vbs through r2 or r1 and the motor winding during intervals t1, and t2. this results in dr aining the bootstrap capac itor voltage quickly. contact the factory for adjustm ents to satisfy trapezoidal motor drive applications using this module. the adjustment will disable the internal pull up circuit. the device part number is spm6m080-010d-b. figure 9. active bias for dsh and dsl internal inputs t1 v t2 time 15 8
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 15 spm6m080-010d g increasing current limit window: the adjustable over-current shutdown reference at pin25 is internally set to 1.64v corresponding to 34a. a voltage divider reference is used as shown in fig.16. internal pull-up to +5v is 31.6k , pull down to ground is 10k , and hysteresis resistance to sd is 49.9 k . the re-start delay time, off time, is about 70 usec. in order to increase the over-current shutdown reference to 2.8v, corresponding to 57a peak current, an external pull-up resistance r is needed. it is recommended to add r=9 k between pins 21 and 25. the corresponding off time will be about 170usec. the additional r=9 k will reduce the high level of sd to 4.4v. figure 10. internal over-current shutdown reference pin 21 sd pin 24 +5v r1 31.6k r2 10k r3 49.9k pin 20 +15v rtn signal gnd r4 2.74k pin 25 itrip-ref
sensitron semiconductor technical data datasheet 4118, rev. d.2 ? 2004 sensitron semiconductor ? 221 west industry court ? deer park, ny 11729 ? (631) 586 7600 fax (631) 242 9798 ? www.sensitron.com ? sales@sensitron.com ? page 16 spm6m080-010d h- cleaning process: suggested precaution following cleaning procedure: if the parts are to be cleaned in an aqueous based cleaning solution, it is recommended that the parts be baked immediately after cleaning. this is to remove any moisture that may have permeated into the device duri ng the cleaning process. for aqueous based solutions, the recommended process is to bake for at least 2 hours at 125 o c. do not use solvents based cleaners. i- soldering procedure: recommended soldering procedure signal pins 1 to 27: 210c for 10 seconds max power pins 28 to 37: 260c for 10 seconds max. pre-warm module to 125c to aid in power pins soldering. ordering information: spm6m080-010d comes standard with a uni-dir ectional current sense signal. for optional bi-directional current sense si gnal, add ?a to the part number as follows: spm6m080-010d-a. for trapezoidal motor drive applications. the device part number is spm6m080-010d-b. disclaimer: 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior notice to impr ove product characteristics. before ordering, purchas ers are advised to contact the sensitron semiconductor sales department for the latest version of the datasheet(s). 2- in cases where extremely high reliabilit y is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety shoul d be ensured by using semiconduc tor devices that feature assured safety or by m eans of users? fail-safe precautions or other arrangement . 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datas heet(s). sensitron semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of info rmation, products or circuits described in the datasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semic onductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any th ird party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any fo rm, in whole or part, without the expressed written permissio n of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provi ded to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any thir d party. when exporting these products (t echnologies), the necessary procedur es are to be taken in accordance with related laws and regulatio ns.

▲Up To Search▲

Price & Availability of SPM6M080-010D10

	To Download SPM6M080-010D10 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .